发明名称 |
METHOD OF PLASMA TREATMENT |
摘要 |
PROBLEM TO BE SOLVED: To prevent deterioration of the characteristics of a device by reducing the metal contamination of a semiconductor substrate after a plasma treatment. SOLUTION: After the semiconductor substrate is etched, Fe and Cr contaminants adhering to the surface of the substrate are removed by exposing the substrate to a plasma of chlorine gas or a mixed gas of chlorine and oxygen. |
申请公布号 |
JP2001250813(A) |
申请公布日期 |
2001.09.14 |
申请号 |
JP20000065698 |
申请日期 |
2000.03.06 |
申请人 |
HITACHI LTD |
发明人 |
YAKUSHIJI MAMORU;NAWATA MAKOTO |
分类号 |
H05H1/46;C23F4/00;H01L21/302;H01L21/3065 |
主分类号 |
H05H1/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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