发明名称 PROBE METHOD AND DEVICE
摘要 PROBLEM TO BE SOLVED: To solve the problem that a probe card is not parallel with a semicon ductor wafer due to inclination of a mounting base by the needle load of a probe when performing inspection, a probe that cannot be sufficiently brought into contact with an electrode pad exists among the plurality of probes, and inspection failure occurs. SOLUTION: In this probe method, a mounting base 11 is moved for allowing a semiconductor wafer W on the upper surface to come into contact with a plurality of probes 12A, and the mounting base 11 is overdriven for performing the electric characteristic inspection of the semiconductor wafer W. Also, this method includes a process that overdrives the mounting base 11 for allowing a plurality of electrode pads P of the semiconductor wafer W to slightly come into contact with each probe 12A, and a process that allows the mounting base 11 to be subjected to ultrasonic vibration only in a horizontal direction while the semiconductor wafer W is slightly in contact with each probe 12A.
申请公布号 JP2001250850(A) 申请公布日期 2001.09.14
申请号 JP20000058657 申请日期 2000.03.03
申请人 TOKYO ELECTRON LTD 发明人 HOSAKA HISATOMI
分类号 G01R31/26;G01R1/06;G01R31/28;H01L21/66;(IPC1-7):H01L21/66 主分类号 G01R31/26
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