METHOD OF MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

摘要

PROBLEM TO BE SOLVED: To simplify a manufacturing process by selectively forming silicicided regions on a semiconductor substrate and the surface of a polycrystalline silicon film. SOLUTION: After forming an insulation film 14 to cover the surface of a polycrystalline silicon film 6a of resistor elements and side wall spacers 11, a silicidizing reaction is caused to form a Ti silicide film 17 on gate electrodes 8a, 8c, source, drain regions (n+ semiconductor regions 12, p+ semiconductor regions 13), exposed surface parts of a polycrystalline silicon film 6b, and the surfaces of upper electrodes 8b of capacitive elements, thereby avoiding lowering the resistance of the resistor elements.