| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming high frequency connection between a fragile chip and a substrate. SOLUTION: In this method, metal 24 is selectively deposited on the surfaces of a chip 10 and a substrate 18, corresponding electric conductive bumps are selectively deposited on the surfaces of the chip and substrate on the metal layer, the pattern of the electric conductive bumps 30 having sponge- and resin- shaped nature is formed, and the chip is placed while the chip is brought into contact with the substrate for aligning. In this case, each electric conductive chip bump engages with each corresponding electric conductive substrate bump, heat and pressure are selectively applied to the chip and substrate, and each chip bump is fused with each corresponding substrate bump for forming electromechanical connection. |
