METHOD FOR FORMING METAL LINE OF SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE: A method for forming metal lines of a semiconductor memory device is provided to decrease the electrical resistance of the metal lines by removing the remaining barrier metal on a semiconductor substrate. CONSTITUTION: A barrier metal(306) is formed on a semiconductor substrate(300) including an interlayer insulating film(302) on which a metal line groove is formed. A metal film is formed to fill up the metal line groove including the barrier metal(306). By using a chemical mechanical polishing method, the metal film and the barrier metal(306) exposed on the semiconductor substrate(300) are flattened. The remaining barrier metal(306) on the semiconductor substrate(300) is removed by an etch-back processing.