| 发明名称 |
ROM-embedded-DRAM |
| 摘要 |
A ROM is embedded within an array of DRAM cells by changing a single mask in a DRAM fabrication process to selectively short circuit the DRAM capacitor lower electrode to its own wordline to create a read-only "1" or to the wordline of an adjacent cell to create a read only "0".
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| 申请公布号 |
US2001021122(A1) |
申请公布日期 |
2001.09.13 |
| 申请号 |
US20010833706 |
申请日期 |
2001.04.13 |
| 申请人 |
KURTH CASEY R.;DERNER SCOTT J.;MULLARKEY PATRICK J. |
发明人 |
KURTH CASEY R.;DERNER SCOTT J.;MULLARKEY PATRICK J. |
| 分类号 |
G11C11/00;G11C11/24;G11C11/404;G11C17/12;H01L21/8242;H01L21/8246;H01L27/105;(IPC1-7):G11C11/24 |
主分类号 |
G11C11/00 |
| 代理机构 |
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代理人 |
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