发明名称 |
ANODIC OXIDIZATION METHODS |
摘要 |
In an anodic oxidization method of the invention for anodizing areas including and surrounding a plurality of gate electrodes connected to a current supply line by respective gate connecting lines, the current supply line supplies currents to the gate electrodes in a manner that the densities of anodizing currents flowing through corresponding parts of any two parallel-running neighboring gate electrodes arranged in a semiconductor island area become substantially equal to each other. No leakage current flows from one gate electrode to another because the anodizing currents are supplied in such a way that no potential difference occurs between any two neighboring gate electrodes during anodic oxidization as a result of differences in current path length. This makes it possible to prevent crystal defects and partial anodization imperfections which could potentially be caused by leakage currents.
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申请公布号 |
US2001021566(A1) |
申请公布日期 |
2001.09.13 |
申请号 |
US19980175844 |
申请日期 |
1998.10.20 |
申请人 |
ZHANG HONGYONG;UOCHI HIDEKI;TSUKAMOTO YOSUKE;TAKAFUJI YUTAKA;KUBOTA YASUSHI |
发明人 |
ZHANG HONGYONG;UOCHI HIDEKI;TSUKAMOTO YOSUKE;TAKAFUJI YUTAKA;KUBOTA YASUSHI |
分类号 |
H01L21/316;H01L21/336;H01L21/762;H01L21/77;H01L21/84;H01L27/12;H01L29/786;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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