发明名称 ANODIC OXIDIZATION METHODS
摘要 In an anodic oxidization method of the invention for anodizing areas including and surrounding a plurality of gate electrodes connected to a current supply line by respective gate connecting lines, the current supply line supplies currents to the gate electrodes in a manner that the densities of anodizing currents flowing through corresponding parts of any two parallel-running neighboring gate electrodes arranged in a semiconductor island area become substantially equal to each other. No leakage current flows from one gate electrode to another because the anodizing currents are supplied in such a way that no potential difference occurs between any two neighboring gate electrodes during anodic oxidization as a result of differences in current path length. This makes it possible to prevent crystal defects and partial anodization imperfections which could potentially be caused by leakage currents.
申请公布号 US2001021566(A1) 申请公布日期 2001.09.13
申请号 US19980175844 申请日期 1998.10.20
申请人 ZHANG HONGYONG;UOCHI HIDEKI;TSUKAMOTO YOSUKE;TAKAFUJI YUTAKA;KUBOTA YASUSHI 发明人 ZHANG HONGYONG;UOCHI HIDEKI;TSUKAMOTO YOSUKE;TAKAFUJI YUTAKA;KUBOTA YASUSHI
分类号 H01L21/316;H01L21/336;H01L21/762;H01L21/77;H01L21/84;H01L27/12;H01L29/786;(IPC1-7):H01L21/76 主分类号 H01L21/316
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