Photomask having small pitch images of openings for fabricating openings in a semiconductor memory device and a photolithographic method for fabricating the same

摘要

A photomask having small pitch images of openings for fabricating an opening of a semiconductor memory device includes a plurality of images of openings arranged in a row direction with a predetermined pitch to be used to transfer the images of openings onto a photoresist layer, and is used for a photolithographic process employing a photoresist flow process. The distance between the centers of the images of openings arranged in the photomask is larger than the pitch. A photolithographic method for fabricating reduced size openings and a semiconductor memory device having openings fabricated using the same method is also provided.