发明名称 INTEGRATED HIGH-FREQUENCY MOS OSCILLATOR
摘要 An integrated high-frequency MOS oscillator circuit comprising at least one active element (F1) and a frequency determining circuit, the oscillator circuit further comprising at least one frequency selective network (R1, C1) which is built up from one or more resistors and one or more reactive elements, such that the oscillation at the desired oscillator frequency can take place substantially unhampered, while oscillations at parasitic oscillation frequencies are suppressed in that at the parasitic oscillation frequencies the loop gain is reduced to an absolute value less than 1.
申请公布号 WO0167604(A1) 申请公布日期 2001.09.13
申请号 WO2001NL00115 申请日期 2001.02.12
申请人 TELEFONAKTIEBOLAGET LM ERICSSON;VAN ZEIJL, PAULUS, THOMAS, MARIA;TANGENBERG, JURJEN 发明人 VAN ZEIJL, PAULUS, THOMAS, MARIA;TANGENBERG, JURJEN
分类号 H03K3/354;(IPC1-7):H03K3/354 主分类号 H03K3/354
代理机构 代理人
主权项
地址
您可能感兴趣的专利