| 摘要 |
The invention relates to a monolithically integrated semiconductor component, comprising a first charge carrier area (12) corresponding to a first doping, at least two structured second charge carrier areas (14) corresponding to an opposite doping arranged at a distance from each other inside the first charge carrier area (12) and third structured charge carrier areas (16) corresponding to the first doping and arranged within the second charge carrier areas (14). The PN transition (22) between the second charge charging areas (14) and the third charge carrying areas (16) is short circuited (source contact) by a contact (20), the first charge carrier area (12) is provided with a contact (drain connection) an the second charge carrier areas (14) can be inverted by means of contacting (26) in the area between the first charge carrier area (12) and the third charge carrier area (16), also comprising at least one Schottky diode (30) mounted in a parallel position with respect to charger carrier area (12) and charge carrier area (16). According to the invention, the first charge carrier area (12) has another contact (28). Said contact is doped with another, surface-near charge carrier area (32) which is respectively doped with a higher concentration according to the doping concentration of the first area (12), whereby an ohmic contact arises and is connected to the anode connection of the at least one Schottky diode (30). |
