发明名称 Method of fabricating contact window
摘要 A method of fabricating a contact window. On semiconductor substrate having a conductive region, a dielectric layer is formed to cover the substrate and the conductive region. A gettering layer is formed on the dielectric layer. A hard mask layer is formed on the gettering layer. The hard mask layer is patterned to expose a part of the gettering layer which is right on top of the conductive region. The exposed gettering layer and the dielectric layer under the exposed gettering layer are removed to form the contact window.
申请公布号 US6287751(B2) 申请公布日期 2001.09.11
申请号 US19980130086 申请日期 1998.08.07
申请人 UNITED MICROELECTRONICS CORP. 发明人 LEE TZUNG-HAN;CHAO LI-CHIEH;CHEN CHUN-TE
分类号 H01L21/768;(IPC1-7):G03F7/00 主分类号 H01L21/768
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