发明名称 MOS buffer immune to ESD damage
摘要 A buffer is integrated with an ESD protection circuit onto a semiconductor substrate. The ESD protection circuit is triggered by means of a MOS-like device having a first spreading resistance during an ESD event. The buffer includes a plurality of finger-type devices connected in parallel, where each finger-type device is provided with a second spreading resistance less than the first spreading resistance.
申请公布号 US6288884(B1) 申请公布日期 2001.09.11
申请号 US19990328161 申请日期 1999.06.08
申请人 :WINDBOND ELECTRONICS CORP. 发明人 YU TA-LEE
分类号 H01L27/02;(IPC1-7):H02H3/22 主分类号 H01L27/02
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