发明名称 SOLID-STATE IMAGING APPARATUS
摘要 The present invention relates to a solid-state imaging apparatus including a first substrate having a plurality of photoelectric conversion units and a second substrate having a plurality of readout circuits. The first substrate is provided with a plurality of first conductive patterns that are electrically separated from one another and the second substrate is provided with a plurality of second conductive patterns that are electrically separated from one another. The first conductive patterns each include a first partial pattern extending in a first direction. The second conductive patterns each include a partial pattern extending in a second direction different from the first direction. The first partial pattern has a length extending in the first direction longer than a length thereof in the second direction.
申请公布号 US2016284756(A1) 申请公布日期 2016.09.29
申请号 US201615181270 申请日期 2016.06.13
申请人 CANON KABUSHIKI KAISHA 发明人 Ichikawa Takeshi;Shimotsusa Mineo;Momma Genzo
分类号 H01L27/146 主分类号 H01L27/146
代理机构 代理人
主权项 1. A solid-state imaging apparatus including a first substrate on which a photoelectric conversion unit and a floating diffusion are arranged and a second substrate on which a pixel amplification unit whose gate is electrically connected to the floating diffusion is arranged, the solid-state imaging apparatus comprising: a first conductive pattern which is arranged on the first substrate; and a second conductive pattern which is arranged on the second substrate, wherein the first conductive pattern includes a first partial pattern that is arranged on a top wiring layer of the first substrate and extends in a first direction, and the second conductive pattern includes a second partial pattern that is arranged on a top wiring layer of the second substrate and extends in a second direction intersecting with the first direction in planar view, wherein a first electrical connection portion of the first partial pattern and a second electrical connection portion of the second partial pattern are in contact with each other at an intersecting portion, and wherein the first electrical connection portion and the second electrical connection portion each are longer in the first direction than in the second direction.
地址 Tokyo JP