发明名称 |
High-voltage bidirectional switch made using high-voltage MOS transistors |
摘要 |
The high-voltage bidirectional switch includes a controlled transistor having a first terminal and a second terminal set, respectively, at a first potential and at a second potential. The controlled transistor moreover includes a control terminal connected to a control block, which is in turn connected to a precharge block The controlled transistor has its bulk region connected to a biasing block which is in turn connected both to the precharge block and to the second terminal of the controlled transistor. The control block and the biasing block are moreover connected to a signal-generator block connected to a control unit. |
申请公布号 |
US6288603(B1) |
申请公布日期 |
2001.09.11 |
申请号 |
US20000595680 |
申请日期 |
2000.06.16 |
申请人 |
STMICROELECTRONICS S.R.L. |
发明人 |
ZANUCCOLI MAURO;CANEGALLO ROBERTO;DOZZA DAVIDE |
分类号 |
G05F3/02;(IPC1-7):G05F3/02 |
主分类号 |
G05F3/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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