发明名称 High-voltage bidirectional switch made using high-voltage MOS transistors
摘要 The high-voltage bidirectional switch includes a controlled transistor having a first terminal and a second terminal set, respectively, at a first potential and at a second potential. The controlled transistor moreover includes a control terminal connected to a control block, which is in turn connected to a precharge block The controlled transistor has its bulk region connected to a biasing block which is in turn connected both to the precharge block and to the second terminal of the controlled transistor. The control block and the biasing block are moreover connected to a signal-generator block connected to a control unit.
申请公布号 US6288603(B1) 申请公布日期 2001.09.11
申请号 US20000595680 申请日期 2000.06.16
申请人 STMICROELECTRONICS S.R.L. 发明人 ZANUCCOLI MAURO;CANEGALLO ROBERTO;DOZZA DAVIDE
分类号 G05F3/02;(IPC1-7):G05F3/02 主分类号 G05F3/02
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