| 摘要 |
A ferroelectric cell in which a ferroelectric stack (44) of a perovskite ferroelectric sandwiched by cubic perovskite metal-oxide conductive electrod es (50, 56) are formed over a silicon body, such as a polysilicon plug (42) penetrating a field oxide (40) over a silicon transistor (34). According to the invention, an oxidation barrier (46) is placed between the lower metal- oxide electrode and the polysilicon. The oxidation barrier may be: a refractory metal sandwiched between two platinum layers which forms a refractory oxide in a platinum matrix; an intermetallic barrier beneath a platinum electrode, e.g., of NiAl; or a combination of Ru and SrRuO3 or similar materials. Thereby, the polysilicon plug is protected from oxidation .
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