| 摘要 |
PURPOSE: A semiconductor manufacturing method is provided to prevent heavy metal pollution, to suppress the increase of the moisture concentration in a hermetically sealed space, and to check the correlation between the moisture concentration in a process chamber and the external area. CONSTITUTION: A corrosive gas treatment is performed that a corrosive gas is made to cause reaction in a reaction chamber(1) by making the corrosive gas flow to the chamber(1), when substrates(W) are carried in the chamber(1) from a hermetically sealed space in substrate carrying systems(2, 3) or carried out of the chamber(1) to the space by means of the systems(2, 3). The substrates(W) are carried in or out of the chamber(1) by means of the systems(2, 3) after the moisture concentration in the hermetically sealed space is measured by means of a first moisture meter(6) connected to the space. The corrosive gas is treated while the moisture concentration in the chamber(1) is measured by means of a second moisture meter(5) connected to the chamber(1) after carrying substrate. |
