| 摘要 |
<p>The invention concerns a non-destructive and immediately operable method for measuring uniformity which consists in controlling in situ the number of incident particles per unit area, during the whole treatment, by locally measuring the emission of photons brought about by particle-surface interaction. The invention also concerns an equipment for implementing said method comprising at least a camera (103) as photon detector, in particular a CCD camera, coupled with a signal processing and data management unit (104). Said unit supplies the value of uniformity defect in the treatment enabling to adjust or stop the treatment. The invention is particularly applicable to ion implantation, silicon wafer etching, and formation of oxide nano-points.</p> |
