SELECTIVE ERASURE OF A NON-VOLATILE MEMORY CELL OF A FLASH MEMORY DEVICE

摘要

A method of selectively erasing an individual memory cell of an array of non-volatile memory cells, by providing an array of non-volatile memory cells that includes a first non-volatile memory cell (10A) that is connected in series with a second non-volatile memory cell (10B) and erasing the first non-volatile memory cell (10A) while not erasing the second non-volatile memory cell (10B).