发明名称 FUSE FOR SEMICONDUCTOR DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To actually prevent occurrence of a crack when a fuse is burned out in the fuse for semiconductor device having a semiconductor body 1, an insulating layer 2 at least partly provided on the upper face of the semiconduc tor body 1, and an web like metal layer 3. SOLUTION: The web like metal layer 3 is arranged on the layer 2, and the layer 3 has narrow area 4 to form the fuse on at least is one area. The prescribed semiconductor area 6 in the semiconductor body 1 is made under the narrowed area 4 with porous semiconductor material so as to insulate the heat.</p>
申请公布号 JP2001244344(A) 申请公布日期 2001.09.07
申请号 JP20010025990 申请日期 2001.02.01
申请人 INFINEON TECHNOLOGIES AG 发明人 WELSER WOLFGANG
分类号 H01L21/82;H01H69/02;H01H85/00;H01H85/044;H01H85/046;H01H85/08;H01H85/10;H01H85/17;H01L23/525;H01L27/02;(IPC1-7):H01L21/82 主分类号 H01L21/82
代理机构 代理人
主权项
地址