SEMICONDUCTOR DEVICE AND METHOD OF FABRICATION

摘要

A semiconductor device and its method of fabrication are disclosed. The method includes forming a first well region (104) in a semiconductor substrate (100). The semiconductor substrate (100) includes a first doped region (102) below the first well region (104). The first well region (104) and the first doped region (102) are doped with a first type dopant and the first well region (104) is electrically connected to the first doped region (102). An isolation region (206) is formed between the first well region (104) and the first doped region (102). The isolation region (206) is electrically connected to a second well region (404). The isolation region (206) and the second well region (404) are doped with a second dopant type The second dopant type is opposite the first dopant type. In one embodiment, the first type dopant includes a p-type dopant, and the second type dopant includes an n-type dopant. The method may further include, forming a second doped region (310) within the first well region (104) and below the isolation region (206). A third doped region (312) with the first type dopant may be formed over the isolation region (206). The method may further include forming a gate structure (504) over the semiconductor substrate (100), forming source/drain regions (604) adjacent the gate structure (504) and forming a protective charge recombination region (610) below the gate structure (504) and the source/drain regions (604).