发明名称 METAL OXIDE THIN FILMS FOR HIGH DIELECTRIC CONSTANT APPLICATIONS
摘要 A high dielectric constant insulator including a thin film of a metal oxide selected from the group consisting of tungsten-bronze-type oxides, pyrochlore-type oxides, and combinations of Bi2O3 with an oxide selected from the group consisting of perovskites and pyrochlore-type oxides. An embodiment contains metal oxides represented by the general stoichiometric formulae AB2O6, A2B2O7 and A2Bi2B2O10, wherein A represents A-site atoms selected from the group of metals consisting of Ba, Bi, Sr, Pb, Ca, K, Na and La; and B represents B-site atoms selected from the group of metals consisting of Ti, Zr, Ta, Hf, Mo, W and Nb. Preferably, the metal oxides are (BaxSr1-x)(TayNb1-y)2O6,where 0</=x</=1.0 and 0</=y</=1.0; (BaxSr1-x)2(TayNb1-y)2O7, where 0</=x</=1.0 and 0</=y</=1.0; and(BaxSr1-x)2Bi2(TayNb1-y)2O10, where 0</=x</=1.0 and 0</=y</=1.0. Thin films according to the invention have a relative dielectric constant >/=40, and preferably about 100. The value of Vcc in the metal oxides of the invention is close to zero. The value of Tcc is <1000ppm, preferably <100.
申请公布号 WO0077832(A3) 申请公布日期 2001.09.07
申请号 WO2000US15956 申请日期 2000.06.09
申请人 SYMETRIX CORPORATION;MATSUSHITA ELECTRONICS CORPORATION 发明人 HAYASHI, SHINICHIRO;JOSHI, VIKRAM;SOLAYAPPAN, NARAYAN;CUCHIARO, JOSEPH, D.;PAZ DE ARAUJO, CARLOS, A.
分类号 C01G35/00;G11C11/22;H01L21/314;H01L21/316;H01L21/822;H01L21/8242;H01L21/8246;H01L21/8247;H01L27/04;H01L27/06;H01L27/105;H01L27/108;H01L29/78;H01L29/788;H01L29/792;(IPC1-7):H01L21/316;H01L27/115 主分类号 C01G35/00
代理机构 代理人
主权项
地址
您可能感兴趣的专利