发明名称 |
SEMICONDUCTOR STORAGE DEVICE |
摘要 |
PURPOSE: To reduce power consumption of a semiconductor storage device formed by hierarchizing an isolation signal generation circuit which adopts a shared sense amplifier system into a main isolation signal generation circuit and a sub isolation signal generation circuit and devises electric disconnection between a cell array and a sense amplifier. CONSTITUTION: The electric potential of a high electric potential side between main isolation signal MIS1 and MIS2 is defined as external power supply potential VDD, and the electric potential of a high electric potential side between sub isolation signals SIS1 and SIS2 is defined as boosted electric potential VPP obtained by boosting the external power supply potential VDD.
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申请公布号 |
KR20010085538(A) |
申请公布日期 |
2001.09.07 |
申请号 |
KR20010009284 |
申请日期 |
2001.02.23 |
申请人 |
FUJITSU LIMITED |
发明人 |
FUJIOKA SHINYA;HARA KOTA;UCHIDA TOSHIYA |
分类号 |
G11C11/401;G11C5/06;G11C8/08;G11C11/409;G11C11/4091;(IPC1-7):G11C11/409 |
主分类号 |
G11C11/401 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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