发明名称 SEMICONDUCTOR STORAGE DEVICE
摘要 PURPOSE: To reduce power consumption of a semiconductor storage device formed by hierarchizing an isolation signal generation circuit which adopts a shared sense amplifier system into a main isolation signal generation circuit and a sub isolation signal generation circuit and devises electric disconnection between a cell array and a sense amplifier. CONSTITUTION: The electric potential of a high electric potential side between main isolation signal MIS1 and MIS2 is defined as external power supply potential VDD, and the electric potential of a high electric potential side between sub isolation signals SIS1 and SIS2 is defined as boosted electric potential VPP obtained by boosting the external power supply potential VDD.
申请公布号 KR20010085538(A) 申请公布日期 2001.09.07
申请号 KR20010009284 申请日期 2001.02.23
申请人 FUJITSU LIMITED 发明人 FUJIOKA SHINYA;HARA KOTA;UCHIDA TOSHIYA
分类号 G11C11/401;G11C5/06;G11C8/08;G11C11/409;G11C11/4091;(IPC1-7):G11C11/409 主分类号 G11C11/401
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