SILICON ON INSULATOR STRUCTURE FROM LOW DEFECT DENSITY SINGLE CRYSTAL SILICON,申请号KR1020017002717-传众专利搜索

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发明名称	SILICON ON INSULATOR STRUCTURE FROM LOW DEFECT DENSITY SINGLE CRYSTAL SILICON
摘要
申请公布号	KR20010085752(A)	申请公布日期	2001.09.07
申请号	KR1020017002717	申请日期	2001.03.02
申请人		发明人
分类号	H01L21/31	主分类号	H01L21/31
代理机构		代理人
主权项
地址

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