| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and its manufacturing method whereby a contacting resistance of its conductive layer with its wiring layer can be suppressed. SOLUTION: On a semiconductor substrate 22 of a memory portion 100, a first insulation layer 26 having therein a second conductive layer 20 is formed. On the first insulation layer 26, a fourth conductive layer 16b passing over the second conductive layer 20 and made of polysilicon is formed to form a second insulation layer 30 on the first insulation layer 26 and the fourth conductive layer 16b. On the second insulation layer 30, there is formed a third insulation layer 102 provided above the fourth conductive layer 16b and having such a thickness that the aspect ratio of an opening portion 104 is made not smaller than 0.6. The opening portion 104 is passed through the second and third insulation layers 30, 102 to be connected with the fourth conductive layer 16b. After forming a Ti layer on the inner wall of the opening portion 104, a metallic layer 36 made of TiN is so formed by an RTN processing as to form in the opening portion 104 a wiring layer 38 connected via the metallic layer 36 with the fourth conductive layer 16b. |
