| 摘要 |
PROBLEM TO BE SOLVED: To improve reduction of half-width (θ//) in the horizontal direction of a far field pattern by current flow, in an AlGaAs based ion implantation type gain guide laser light emitting device which is formed by using a so-called off substrate. SOLUTION: In a semiconductor laser light emitting device 1 having an AlGaAs based ion implantation type gain guide laser structure which is formed on a substrate 11 wherein a substrate surface 11S has an inclination to a crystal face of a crystal constituting the substrate, a P-type clad layer 14 includes zinc whose concentration is at least 8×1017/cm3 and at most 1.5×1018/cm3, and a P-type cap layer 15 contains zinc whose concentration is at least 1×1019/cm3 and at most 1×1020/cm3. |
