| 摘要 |
PROBLEM TO BE SOLVED: To enhance the driving capability of the PMOS transistor without degrading the driving capability of the NMOS transistor of a CMOS transistor. SOLUTION: A NMOS transistor 31 is formed in the semiconductor region (SOI layer 14N) in the NMOS formation region 30 on a substrate (SOI substrate 11) and a PMOS transistor 51 is formed in the semiconductor region (SOI layer 14P) in the PMOS formation region 50 on the SOI substrate 11 to obtain a semiconductor device provided with a CMOS transistor 1. In this semiconductor device, the semiconductor region (SOI layer 14P) in the PMOS formation region 50 is so formed as to have compressive stress and the semiconductor region (SOI layer 14N) in the NMOS formation region 30 is so formed as to have stress smaller than the semiconductor region (SOI layer 14P) in the PMOS formation region 50 does.
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