DENSE-PLASMA ETCHING OF INP-BASED MATERIALS USING CHLORINE AND NITROGEN

摘要

A semiconductor dry etching process that provides deep, smooth, and vertical etching of InP-based materials using a chlorinated plasma with the addition of nitrogen (N>2<) gas. Etching of InP-based semiconductors using an appropriate C1>22< mixture without any additional gases provides improved surface morphology, anisotropy and etch rates.