| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor light emitting device of high reliability which has a plurality of semiconductor light emitting elements. SOLUTION: A first semiconductor light emitting element forming region is opened on a substrate 30, and a mask layer MS for protecting a second semiconductor light emitting element forming region is formed. A first laminate wherein at least a first clad layer 32, a first active layer 33 and a second clad layer 34 are selectively laminated on the first semiconductor light emitting element forming region by an epitaxial growth method using the mask layer as a mask is formed, and the mask layer is eliminated. A second laminate wherein at least a third clad layer 37, a second active layer 38 and a fourth clad layer 39 are laminated by an epitaxial growth method is formed. The second laminate in the second semiconductor light emitting element forming region is left, and the second laminate in the other region is eliminated. |
