| 摘要 |
PROBLEM TO BE SOLVED: To provide a surface emitting semiconductor laser wherein polarizing direction of a laser light can be controlled and a manufacturing method of the semiconductor laser. SOLUTION: In the surface emitting semiconductor laser 100, a pillar-shaped part 110 is formed in a part of a resonator 120, which is formed by laminating a lower mirror 103, an active layer 105 and an upper mirror 117. The upper mirror 117 is contained in the pillar-shaped part 110 and includes a first semiconductor deposit layer 114 and a second semiconductor deposit layer 118 which is continuous with an outer side surface of the first semiconductor deposition layer 114. The second semiconductor deposit layer 118 includes a first semiconductor layer 118a, a second semiconductor layer 118b, a barrier layer 118c and a current constriction layer 111. The first semiconductor deposit layer 114 includes a fist semiconductor layer 114a, a second semiconductor layer 114b and a current catchment basin layer 107a.
|
