| 摘要 |
PURPOSE: A self-heating quartz plate for manufacturing a semiconductor is provided to remove efficiently residues deposited on a quartz plate in a wafer etching process by installing a self-heating device to a quartz plate. CONSTITUTION: A quartz plate(1) is adhered to a lower face of a plasma electrode plate in order to perform an etching process for forming a fine pattern on a wafer installed in a chamber. A plurality of heating groove(11a,11a') is formed on each side of a plurality of plate. The heating grooves(11a,11a',11a") are adhered to each other. Heated nitrogen gas is supplied through the heating grooves(11a,11a').
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