| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of reducing consumed silicon and promoting silicon transformation by utilizing the transformation of silicide through silicon ion implantation, as well as be capable of manufacturing a semiconductor device having various properties since the transformation state of the silicide is varied in accordance with the concentration of implanted silicon ion. CONSTITUTION: First, silicide is formed by depositing and heat-treating a metal layer on a semiconductor layer(201) including silicon. Then, the silicide is transformed by implanting silicon ions into the silicide and then heat-treating the silicide. In this structure, the metal layer is formed of high melting-point metal including Ti, Co and W.
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