Electronic structure comprising high and low voltage transistors, and a corresponding fabrication method

摘要

A structure of electronic devices integrated in a semiconductor substrate with a first type of conductivity comprising at least a first HV transistor and at least a second LV transistor, each having a corresponding gate region. Said first HV transistor has lightly doped drain and source regions with a second type of conductivity, and said second LV transistor has respective drain and source regions with the second type of conductivity, each including a lightly doped portion adjacent to the respective gate region and a second portion which is more heavily doped and comprises a silicide layer.