| 发明名称 |
METHOD OF FORMING THIN COPPER FILM |
| 摘要 |
Copper material is exposed on the surface of a TiN film (an underlying film) formed in the main surface of a silicon substrate with a silicon oxide film interposed. Subsequently, a thin copper film is formed on TiN film. Thus, the thin copper film can be formed on the film including metal with high melting point or nitride thereof with high adhesion by means of CVD.
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| 申请公布号 |
US2001019847(A1) |
申请公布日期 |
2001.09.06 |
| 申请号 |
US19980038117 |
申请日期 |
1998.03.11 |
| 申请人 |
MORI TAKESHI;FUKADA TETSUO;HASEGAWA MAKIKO;TOYODA YOSHIHIKO |
发明人 |
MORI TAKESHI;FUKADA TETSUO;HASEGAWA MAKIKO;TOYODA YOSHIHIKO |
| 分类号 |
H01L21/28;C23C16/02;C23C16/18;H01L21/3205;H01L21/768;H01L23/52;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/28 |
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