Semiconductor device and fabrication method thereof

摘要

To provide a semiconductor device having high mass production performance and high reliability and reproducibility by simple fabrication steps, in a constitution of a semiconductor device of a bottom gate type formed by a semiconductor layer having a crystal structure, source and drain regions are constituted by a laminated layer structure comprising a first conductive layer (n+ layer), a second conductive layer (n- layer) having resistance higher than the first conductive layer and an intrinsic or a substantially intrinsic semiconductor layer (i layer) in which the n- layer functions as an LDD region and the i layer functions as an offset region in a film thickness direction.