| 摘要 |
A stacked capacitor includes a top electrode, a capacitor insulator film made of BST, and a bottom electrode having a hollow cylindrical shape and connected through a contact plug to a diffused region of a silicon substrate. The bottom electrode includes a barrier layer, a first electrode layer and a second electrode layer, wherein the first and the second electrode layers are deposited on the barrier layer, followed by patterning of the second electrode layer for forming a hollow therein. The contact resistance between the bottom electrode and the contact plug is low due to excellent crystalline orientation alignment of the first electrode layer and thus prevention of oxidation of the contact plug during deposition of the BST film.
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