发明名称 Semiconductor device and substrate for semiconductor device
摘要 In a substrate for a semiconductor device including a plurality of first through holes and a wiring pattern having a conductive land portion covering the entire surface of the opening of each of the first through holes on one surface, a second through hole is formed in a region other than the forming region of the wiring pattern, and the shape of opening of said second through hole is not a circular shape and has a corner portion.
申请公布号 US6285086(B1) 申请公布日期 2001.09.04
申请号 US20000559253 申请日期 2000.04.27
申请人 SHARP KABUSHIKI KAISHA 发明人 SOTA YOSHIKI;JUSO HIROYUKI
分类号 H01L23/12;H01L21/56;H01L23/13;H01L23/31;H05K1/02;H05K3/34;(IPC1-7):H01L23/48;H01L23/52;H01L29/40 主分类号 H01L23/12
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