| 摘要 |
A method of forming an interconnection by using a landing pad is disclosed. In a semiconductor device having a memory cell portion and a peripheral circuit portion, a refractory metal is used for the bitline instead of the usual polycide, to concurrently form a contact on an active region of an N-type and a P-type substrate. A landing pad is formed on the peripheral circuit portion at the same time as a bitline is formed on the memory cell portion. In such a process, a substantial contact hole for the interconnection is formed on the landing pad so that an aspect ratio of the contact can be lowered. Accordingly, when forming a metal interconnection, the contact hole for the interconnection is easily filled by Al-reflow so that the step coverage of the metal being deposited in the contact hole for the interconnection is enhanced, and the contact resistance is reduced. As a result, the reliability of the semiconductor device is improved. |
