| 摘要 |
PROBLEM TO BE SOLVED: To provide a composition for film formation capable of forming a coating film having uniform thickness, excellent in mechanical strength, clack resistance, resistance to CMP(chemical Mechanical Polishing) and low in dielectric constant as a layer insulation material of a semiconductor element. SOLUTION: This composition for film formation includes (A) a hydrolyzate and/or a condensate of one or more kind of compounds selected from (A-1) R1aSi(OR2)4-a, (e.g. phenyltrimethoxy silane or the like), (A-2) R3bSi(OR4)4-b, (e.g. tetramethoxy silane or the like), (A-3) R5c(R6O)3-cSi-(R9)e-Si(OR7)3-dR8d, (e.g. hexamethoxydisiloxane or the like), and (B) a radical generator and/or a triazene compound having two or more -N=N-NR10R11 groups (e.g. bis(3,3- dimethyl-triazenylphenyl) ether or the like).
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