Integrated electrical circuits

摘要

1,076,614. Variable reactance circuits. RADIO CORPORATION OF AMERICA. Nov. 18, 1964 [Dec. 17, 1963], No. 46950/64. Heading H3R. [Also in Division H1] An integrated circuit formed in or on a substrate of semi-conductor material comprises a three-electrode active device (an insulatedgate field-effect transistor as described) with a pair of input terminals to which an input signal voltage is applied and a phase-shifting network including resistive and capacitative elements connected between the input terminals, so that the net current flowing through the input terminals lags behind the input signal voltage and the circuit behaves in a manner similar to that of an inductor. The resistive element in the phase-shifting network may be provided by the drain-source path of a second insulated-gate field-effect transistor having a common drain electrode with the first, and in one embodiment (Figs. 6 and 9) a variable control voltage source is connected between the gate and source electrodes of this second transistor.