| 摘要 |
A MOVPE method is provided that makes it possible to grow a high-quality nitride crystal of a group III element. The method comprises the steps (a) to (d). In the step (a), an organometallic compound in a gas phase is supplied to a reaction chamber as a group III component material by a carrier gas. In the step (b), a nitrogen compound in a gas phase is supplied to the chamber as a group V component material by the carrier gas. In the step (c), a hydrocarbon in a gas phase is supplied to the chamber by the carrier gas. In the step (d), the organometallic compound and the nitrogen compound are reacted with each other in a atmosphere containing the hydrocarbon in the chamber to grow a nitride crystal of a group III element on a crystalline substrate. As the hydrocarbon, any hydrocarbon containing at least one carbon-to-carbon (i.e., C-C) bond in its molecule (i.e., alkanes) may be used. Preferably, any hydrocarbon containing at least one double or triple carbon-to-carbon bond (i.e., C=C or C=C) in its molecule (i.e., alkens or alkynes) is additionally supplied to the chamber. A step of supplying a p- or n-type dopant material to the chamber may be added, in which the nitride crystal exhibits the p- or n-type conductivity.
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