| 摘要 |
PURPOSE: A method for manufacturing a micro pattern is provided to stably control a process, by embodying a minimum critical dimension necessary for a next-generation device, and by increasing margin of a critical dimension of a photoresist pattern. CONSTITUTION: The first layer is formed on a semiconductor substrate(20). The first photoresist pattern exposing a predetermined portion of the first layer and having the first critical dimension is formed on the first layer. A predetermined portion of the surface of the first photoresist pattern is removed to form the second photoresist pattern(220) composed of the remaining first photoresist pattern having the second critical dimension smaller than the first critical dimension. The first layer not protected by the second photoresist pattern is eliminated to form the first layer pattern composed of the remaining first layer. The second photoresist pattern is eliminated.
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