METHOD FOR MANUFACTURING CAPACITOR USING SELECTIVE HEMISPHERICAL GRAIN GROWTH BY POLYMER ADHESION AND CAPACITOR MANUFACTURED THEREBY

摘要

PURPOSE: A capacitor manufactured by using a selective hemispherical grain growth is provided to effectively prevent a bridge phenomenon while maintaining the same electrical characteristic as compared with a conventional hemispherical grain(HSG) capacitor, by making the HSG not formed in the upper surface and the corner of a lower electrode of a cylinder type. CONSTITUTION: A hemispherical grain(HSG) is formed on the outer, inner or outer/inner surfaces of a lower electrode(142) of a cylinder shape, and the spherical grain is formed only on the surface except the upper surface and the corner of the lower electrode of the cylinder shape. A dielectric layer is formed on the lower electrode. An upper electrode is formed on the dielectric layer.