| 摘要 |
PURPOSE: An electrically erasable and programmable read-only-memory(EEPROM) cell is provided to decrease the number of steps for forming a gate, by using a high density p-type impurity diffusion region formed on the right and left sides of a floating gate functioning as a control gate to which an erase voltage or program voltage is applied. CONSTITUTION: An n-well(3) is located in a part of a lower region of a p-type substrate(1). A field oxide layer is located in an interface between the n-well and the p-type substrate. A consecutive floating gate(4) is located in a part of an upper portion of the p-type substrate, the field oxide layer and the n-well. A high density n-type impurity diffusion region(5) is located in a partial region of the p-type substrate positioned under a lateral surface of the floating gate. A high density p-type impurity diffusion region(6) is located in a part of the n-well under a lateral surface of the floating gate.
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