发明名称 SPUTTERING METHOD AND SPUTTERING SYSTEM
摘要 PROBLEM TO BE SOLVED: To obtain uniform film thickness distribution over a long period in a multi-cathode-type sputtering system. SOLUTION: In this sputtering method, film deposition is applied to the surface of a substrate 3 by using a plurality of targets 6 in vacuum. Moreover, electric power to be applied to each of the targets 6 is nearly equalized, and the distance between the target 6 and the substrate 3 is set independently for each target 6. The ratio of the electric power applied to each of the targets 6 to the minimum applied electric power is regulated to <=1.5.
申请公布号 JP2001234336(A) 申请公布日期 2001.08.31
申请号 JP20000040904 申请日期 2000.02.18
申请人 ULVAC JAPAN LTD 发明人 HIGUCHI YASUSHI;TAGUMA YASUHIRO;NAKAMURA SATOSHI;UEHIGASHI TOSHIMITSU;KOMATSU TAKASHI
分类号 H01L21/203;C23C14/34;H01L21/285;(IPC1-7):C23C14/34 主分类号 H01L21/203
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