| 摘要 |
PROBLEM TO BE SOLVED: To obtain an excellent trench element isolation structure, and to provide a reliable semiconductor device. SOLUTION: This manufacturing method of a semiconductor device has a process that forms an ozone-TEOS film 12 that is used as a pad insulating film on a semiconductor substrate 2, a process that forms a trench 3 on the ozone-TEOS film 12 and the substrate 2, a process that buries the inside of the trench 3 with a silicon oxide film 17 with a different etching rate from that of the ozone-TEOS film 12, and a process that uses conditions where the etching rate is larger in the ozone-TEOS film 12 out of the exposed oxone-TEOS film 12 and the insulating film of the silicon oxide film 17 for semi-selectively eliminating the ozone-TEOS film 12 in the process for eliminating the ozone- TEOS film 12, and forms an insulating film 7 for isolating elements without any recesses.
|
