发明名称 METHOD FOR PATTERNING, METHOD OF MANUFACTURING THIN FILM DEVICE, AND METHOD OF MANUFACTURING THIN FILM MAGNETIC HEAD
摘要 PROBLEM TO BE SOLVED: To provide a method for patterning by which the electrostatic breakdown of a thin film to be patterned caused by EB and/or dry etching can be prevented, a method of manufacturing thin film device, and a method of manufacturing thin film magnetic head. SOLUTION: In the method for patterning, at least an insulating organic film and a conductive film are formed on the surface of the thin film to be patterned and a resist film is formed on the conductive film. Then the resist film is patterned by electron beam lithography, and the thin film to be patterned is patterned by dry etching by using the patterned resist film as a mask. After patterning the thin film, at least one of the peelable films is removed.
申请公布号 JP2001237217(A) 申请公布日期 2001.08.31
申请号 JP20000042789 申请日期 2000.02.21
申请人 TDK CORP 发明人 UEJIMA SATOSHI
分类号 C23F4/00;G03F7/09;G11B5/31;G11B5/39;H01L21/027;H01L21/302;H01L21/3065;(IPC1-7):H01L21/306 主分类号 C23F4/00
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