STRUCTURE AND METHOD FOR BOND PADS OF COPPER-METALLIZED INTEGRATED CIRCUITS

摘要

PURPOSE: A structure and a method for bond pads of copper-metallized integrated circuits are provided to be capable of electrically wire/ribbon connecting to a mutually connecting copper metallization of an integrated circuit and to exhibit rigidity, reliability at a low cost. CONSTITUTION: A structure of a bonding pad for a copper metallized integrated circuit comprises the first barrier metal layer deposited on a surface of a non-oxidative copper having a copper diffusion coefficient at 250 deg.C of lower than 1*10E-23 cm2/s and a thickness of about 0.5 to 1.5 microns. The structure further comprises the second barrier metal layer having a diffusion coefficient of the first barrier metal at 250 deg.C of lower than 1*10E-14 cm2/s and a thickness of less than 1.5 microns on the first barrier metal layer. This structure finally comprises an outermost layer made of a bondable metal and a metal wire bonded thereonto in a metallurgical connection.