Interconnect structure having improved resist adhesion

摘要

A method for use in patterning a conductive layer of an integrated circuit includes providing a conductive layer to be patterned and then forming a titanium nitride layer on the conductive layer. An oxide region is formed on the titanium nitride layer. A photoresist layer is formed on the oxide region for use in patterning the conductive layer. The oxide region may be formed by oxidation of the titanium nitride layer or by depositing an oxide layer on the titanium nitride layer.