| 摘要 |
PURPOSE: Provided is a resist material which is sensitive to high energy beams, excellent in sensitivity, resolution and plasma etching resistance at a wavelength of 200 nm or less, therefore, suitable as a fine pattern-forming material for manufacturing a very large-scale integrated circuit. CONSTITUTION: The chemically amplified resist material comprises a polymeric compound having as a recurring unit a fluorinated acrylic derivative represented by general formula(1) in its main chain (wherein R1, R2 and R3 are each hydrogen atom, fluorine atom, a C1-20 linear, branched or cyclic alkyl group or a fluoroalkyl group; at least one of R1, R2 and R3 contains a fluorine atom; and R4 is a hydrophilic group). The polymeric compound has excellent transmissivity to UV light ranged of less than 300 nm wavelength, especially, to F2, Kr2, KrAr or Ar2 light and superior resistance against ablation of main chains and allows the resist material to have low absorption at an exposure wavelength, in particular, of the F2 eximer laser and to easily form a pattern fine and perpendicular to the substrate.
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