发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PURPOSE: To alleviate the absolute control accuracy of a phase in a mask having a groove shifter structure. CONSTITUTION: Transfer regions 4C, 4D formed on a different flat surface positions of the same surface of the same masks 2 are multiple exposed by scanning exposure. The same mask patterns are formed on the regions 4C, 4D, but the dispositions of shifters 2d are opposite each other.
申请公布号 KR20010082652(A) 申请公布日期 2001.08.30
申请号 KR20010007480 申请日期 2001.02.15
申请人 HITACHI, LTD. 发明人 HASEGAWA NORIO;HAYANO KATSUYA;IMAI AKIRA
分类号 H01L21/027;G03F1/00;G03F1/30;G03F1/68;G03F7/20 主分类号 H01L21/027
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